Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport
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| Description | scientific article published on 05 December 2012 |
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author: Oleksandr V Bilousov Colm O'Dwyer Xavier Mateos Joan Josep Carvajal Francesc Díaz Magdalena Aguiló |
| Publication date | December 5, 2012 |
| Language | English |
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