Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)
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| Description | scholarly article in Physical Review B, vol. 82 no. 8, August 2010 |
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author: Hubert Ebert Benjamin Balke Gerhard H. Fecher Claudia Felser Siham Ouardi Gregory Stryganyuk |
| Publication date | August 11, 2010 |
| Language | English |
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