Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate Dielectrics
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| Description | scholarly article by A. Veloso et al published November 2007 in IEEE Electron Device Letters |
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author: Christoph Adelmann |
| Publication date | November 2007 |
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