Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1–xAs structures designed for use in power FET devices
| Image |  |
|---|---|
| Description | article |
| Author/s |
author: Mark Hopkinson |
| Publication date | 1996 |
| Language | English |
| Country of origin | |
| Wikipedia link | |
| Copyright status | |
| Missing/wrong data? | Edit Wikidata item |