High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
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| Description | article |
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author: Nirmal J Ghimire Jiaqiang Yan Bhim Prasad Chamlagain David Tománek |
| Publication date | May 22, 2014 |
| Language | English |
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