Self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET with selectively regrown source and drain contact layers
| Image |  |
|---|---|
| Description | scientific article published in June 2011 |
| Author/s | |
| Publication date | June 2011 |
| Language | |
| Country of origin | |
| Wikipedia link | |
| Copyright status | |
| Missing/wrong data? | Edit Wikidata item |