Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V
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| Description | scientific article published in December 2016 |
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author: Elvedin Memisevic Erik Lind |
| Publication date | December 2016 |
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