Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
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| Description | scientific article published on 21 October 2015 |
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author: Eleftherios Iliopoulos Thomas Kehagias Julita Smalc-Koziorowska Thomas Walther |
| Publication date | October 21, 2015 |
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