Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]
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| Description | scientific article published on 16 May 2016 |
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author: Qing Chen |
| Publication date | May 16, 2016 |
| Language | English |
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