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Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]
scientific article published on 16 May 2016
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Publication date:
May 16, 2016
Language:
English
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Unknown
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