Correction: High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C
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| Description | article |
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author: Hendrik Faber Yen-Hung Lin Thomas D. Anthopoulos Martyn A McLachlan |
| Publication date | September 9, 2013 |
| Language | English |
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