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Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the(3×3)−3C−SiC(1¯1¯1¯)reconstruction

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Description scholarly article in Physical Review B, vol. 91 no. 16, April 2015
Author/s

author: Lydia Nemec  Patrick Rinke  Volker Blum  Matthias Scheffler 

Publication date April 17, 2015
Language English
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https://archive.org/details/arxiv-1503.08588

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