Missing/wrong data?
Log in to edit
Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer
article
Author/s
Work details
Publication date
March 14, 2015
-
-
Language
English
Copyright status
Copyright status information is not available for this work. The copyright status depends on the jurisdiction, the author's date of death and the date the work was created or published.
To learn more about copyright terms in different countries, visit the countries and terms page.