Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices
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| Description | article |
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author: Jürgen Schubert Qing-Tai Zhao Siegfried Mantl Martina Luysberg |
| Publication date | 2011 |
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