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Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

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Description scientific article published in Science
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author: Konstantin Novoselov  Nuno M. R. Peres  Roman Gorbachev  Andre Geim  Laurence Eaves  Artem Mishchenko  Sergey V. Morozov 

Publication date February 2, 2012
Language English
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