Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
| Image |  |
|---|---|
| Description | |
| Author/s |
author: Takeshi Ohshima |
| Publication date | February 2014 |
| Language | |
| Country of origin | |
| Wikipedia link | |
| Copyright status | |
| Missing/wrong data? | Edit Wikidata item |