Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC
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| Description | scholarly article in Physical Review B, vol. 66 no. 23, December 2002 |
| Author/s |
author: Takeshi Ohshima Norikazu Mizuochi |
| Publication date | December 5, 2002 |
| Language | English |
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