EPR studies of the isolated negatively charged silicon vacancies inn-type4H- and6H-SiC: Identification ofC3vsymmetry and silicon sites
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| Description | scholarly article in Physical Review B, vol. 68 no. 16, October 2003 |
| Author/s |
author: Takeshi Ohshima Norikazu Mizuochi |
| Publication date | October 23, 2003 |
| Language | English |
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