Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
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| Description | article |
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author: Fengzai Tang Rachel Angharad Oliver Jon Barnard Giorgio Divitini Martin Frentrup Paul A J Bagot Colin Humphreys Tomas L. Martin |
| Publication date | January 14, 2018 |
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