Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
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| Description | scientific article published on 06 July 2012 |
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author: Nicolas Tétreault Robin Humphry-Baker Etienne Baranoff Mohammad Khaja Nazeeruddin Aravind Kumar Chandiran Michael Grätzel |
| Publication date | July 6, 2012 |
| Language | English |
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