Missing/wrong data?
Log in to edit
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
scientific article published on 15 September 2018
Author/s
author: Menno J Kappers, George Christian, Fabien C-P Massabuau, Rachel Angharad Oliver, Colin Humphreys, Philip Dawson
Work details
Publication date
September 15, 2018
-
-
Language
English
Copyright status
Copyright status information is not available for this work. The copyright status depends on the jurisdiction, the author's date of death and the date the work was created or published.
To learn more about copyright terms in different countries, visit the countries and terms page.