Erratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)]

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author: Mauricio Terrones  Kenji Watanabe  Luis Balicas 

Publication date February 8, 2016
Language English
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