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Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE

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Description scientific article published on 01 August 2010
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author: Nigel D. Browning  Miriam Herrera Collado  Nilanjan Halder 

Publication date August 1, 2010
Language English
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