Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implantedc-Si
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| Description | scientific article published in Physical Review Letters |
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author: Laurent Karim Béland Yonathan Anahory François Schiettekatte Peter Brommer Normand Mousseau |
| Publication date | September 4, 2013 |
| Language | English |
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