Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method
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| Description | scholarly article in Physical Review B, vol. 91 no. 22, June 2015 |
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author: Laurent Karim Béland Mickaël Trochet Peter Brommer Normand Mousseau |
| Publication date | June 16, 2015 |
| Language | English |
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