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Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS in the Presence of Defects, Strain, and Charged Impurities

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Description scholarly article published in ACS Nano
Author/s

author: Takashi Taniguchi  Nedjma Bendiab  Yannick J Dappe  Toai Le Quang  Vincent Bouchiat  Johann Coraux  Laurence Magaud  Jean-Yves Veuillen  Laëtitia Marty  Vladimir Cherkez  Felix Herziger  Simone Lisi  Kenji Watanabe  Raul Arenal  Goutham Nayak  Sudipta Dubey 

Publication date October 23, 2018
Language English
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