Erratum: “Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors” [Appl. Phys. Lett. 101, 093308 (2012)]
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| Description | article |
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author: Christopher R McNeill |
| Publication date | October 22, 2012 |
| Language | English |
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