Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition
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author: Claudia Wiemer Marco Fanciulli Sabina Spiga Alessandro Molle |
| Publication date | August 24, 2011 |
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