A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2(Me = Zr, Hf)
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author: Elena Cianci Claudia Wiemer Alessio Lamperti Alessandro Molle |
| Publication date | 2013 |
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