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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013

Author/s

author: Tongtong Zhu, Fabrice Oehler, Menno J Kappers, Rachel Angharad Oliver, Colin Humphreys, Fabien C-P Massabuau

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Work details

Publication date
February 21, 2013
- -
Language
English

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