High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment
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| Description | article by Mark Rosamond et al published August 2015 in Microelectronic Engineering |
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author: Mark Rosamond Edmund Linfield Joseph Batley Gavin Burnell B. J. Hickey |
| Publication date | August 2015 |
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