Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process.
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| Description | scientific article published on 16 March 2018 |
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author: Gemma Martín Sergi Hernández Rosalía Serna Antonio Mariscal Oriol Blázquez Ivan Camps |
| Publication date | March 16, 2018 |
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