Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

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Description scientific article published on 13 October 2014
Author/s

author: Oleksandr V Bilousov  Colm O'Dwyer  Joan Josep Carvajal  Francesc Díaz  Hugh Geaney  Magdalena Aguiló  Vitaly Z. Zubialevich  Peter J. Parbrook 

Publication date October 13, 2014
Language English
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