Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
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| Description | scientific article published on 22 June 2015 |
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author: Gwan-Hyoung Lee James C. Hone Xian Zhang Takashi Taniguchi Young Duck Kim Philip Kim Kenji Watanabe Ghidewon Arefe |
| Publication date | June 22, 2015 |
| Language | English |
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| Missing/wrong data? | Edit Wikidata item |