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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

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Description scientific article published on 5 September 2015
Author/s

author: Hema C. P. Movva  Takashi Taniguchi  Amritesh Rai  Sangwoo Kang  Babak Fallahazad  Emanuel Tutuc  Kenji Watanabe  Kyounghwan Kim 

Publication date September 5, 2015
Language English
Country of origin
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https://archive.org/details/arxiv-1509.03896

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