High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
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| Description | scientific article published on 8 July 2016 |
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author: Chun-Wei Huang Xiangheng Xiao Xuming Zou Zhiyong Fan Shanshan Chen |
| Publication date | July 8, 2016 |
| Language | English |
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| Missing/wrong data? | Edit Wikidata item |