Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors
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| Description | scientific article published on 13 September 2016 |
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author: James C. Hone |
| Publication date | September 13, 2016 |
| Language | English |
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