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Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

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Description scientific article published on April 30, 2012
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author: Long-Qing Chen 

Publication date April 30, 2012
Language English
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https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadma.201201004

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