H-induced dangling bonds in H-isoelectronic-impurity complexes formed in GaAs1-yNy alloys.
| Image |  |
|---|---|
| Description | scientific article published on 15 May 2007 |
| Author/s |
author: Giuseppe Mattioli |
| Publication date | May 15, 2007 |
| Language | English |
| Country of origin | |
| Wikipedia link | |
| Copyright status | |
| Missing/wrong data? | Edit Wikidata item |