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Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization.

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Description scientific article published on 12 June 2017
Author/s

author: Fabrizio Roccaforte  Bruno Pignataro  Filippo Giannazzo  Michelangelo Scopelliti  Simonpietro Agnello  Giuseppe Greco  Ioannis Deretzis 

Publication date June 26, 2017
Language English
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