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Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

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Description scientific article published on 14 June 2017
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author: Lars-Erik Wernersson  Elvedin Memisevic  Axel R Persson  Erik Lind 

Publication date June 14, 2017
Language English
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