High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.
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| Description | scientific article published on 11 September 2017 |
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author: Norah Alwadai Sergei Lopatin Iman Roqan |
| Publication date | September 22, 2017 |
| Language | English |
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