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Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer deposition

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Description scientific article published on 21 February 2014
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author: Elena Cianci  Claudia Wiemer  Alessio Lamperti  Marco Fanciulli  Sabina Spiga  Alessandro Molle 

Publication date February 21, 2014
Language English
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