Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).
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| Description | scientific article published on June 2015 |
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author: Hiroshi Amano |
| Publication date | June 1, 2015 |
| Language | English |
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