Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
| Image |  |
|---|---|
| Description | scientific article published on 06 September 2013 |
| Author/s | |
| Publication date | September 6, 2013 |
| Language | |
| Country of origin | |
| Wikipedia link | |
| Copyright status | |
| Missing/wrong data? | Edit Wikidata item |