The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
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| Description | scientific article published on 14 October 2020 |
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author: Joff Derluyn Sven Besendörfer Jochen Friedrich Farid Medjdoub Elke Meissner Tobias Erlbacher |
| Publication date | October 14, 2020 |
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